Samsung announced today that it has begun mass production of 16Gb (gigabit) LPDDR5 DRAM for mobile devices using the company’s third-generation 10 nm process.
Samsung has started mass production of its new 16Gb DRAM chips, which are based on the third-generation 10 nm process adopted with EUV lithography. According to the company’s official announcement, the 16Gb DRAM chip not only offers mobile memory capacity but also performance, with data transfer rates reaching 6400Mbps, 16% faster than the 12Gb LPDDR5 DRAM chips used in today’s leading mobile devices.
The LPDDR5 DRAM chips are also expected to be used in automotive devices, which Samsung says will “provide temperature range and reliability standards for harsh environments”, Samsung said, and by mass-producing the new 16Gb LPDDR5 chips, Samsung will be able to achieve a significant increase in space savings in the core mobile device market in 2021. The company wrote that it plans to further strengthen its presence.
Jung-Bae Lee, vice president of DRAM Projects and Technology at Samsung, said, “The new third-generation 10 nm process, 16Gb LPDDR5, overcomes the size challenges of DRAM at advanced nodes and brings the industry to a new threshold. We plan to continue to expand our premium DRAM lineup and exceed customer demand as we lead the growth of the overall memory market,” said Mr. Lee.